Junction formation of CuInSe2 with CdS: A comparative study of "dry" and "wet" interfaces
Identifieur interne : 000243 ( Russie/Analysis ); précédent : 000242; suivant : 000244Junction formation of CuInSe2 with CdS: A comparative study of "dry" and "wet" interfaces
Auteurs : RBID : Pascal:07-0411349Descripteurs français
- Pascal (Inist)
- Etude comparative, Interface, Rayonnement synchrotron, Spectre photoélectron RX, Electrolyte, Procédé voie humide, Procédé voie sèche, Bande valence, Discontinuité bande, Plan expérience, Energie interface, Hétérojonction, Mesure température, Température ambiante, Cuivre séléniure, Indium séléniure, Chalcopyrite, Cadmium sulfure, Polycristal, Cellule solaire, CuInSe2, CdS, 7320A, 8460J, Hétérointerface.
English descriptors
- KwdEn :
- Ambient temperature, Band offset, Cadmium sulfides, Chalcopyrite, Comparative study, Copper selenides, Dry process, Electrolytes, Experimental design, Heterointerface, Heterojunctions, Indium selenides, Interface energy, Interfaces, Polycrystals, Solar cells, Synchrotron radiation, Temperature measurement, Valence bands, Wet process, X-ray photoelectron spectra.
Abstract
The junction formation of polycrystalline CuInSe2 absorbers (CIS) with thermally evaporated CdS was investigated by high-resolution synchrotron X-ray photoelectron spectroscopy. The chemistry and electronics of the interfaces of Cd partial electrolyte treated CIS ("wet" processed) and clean, decapped CIS ("dry" processed) were compared. A valence band offset of 0.96(10) eV was determined in both cases. The Cd (Se,OH) surface layer induced by the wet Cd partial electrolyte process does not significantly modify the band alignment at the CIS/CdS heterointerface from the "dry", vacuum-processed CIS/CdS interface. During the stepwise interface formation the energy converting capability of the CIS/CdS heterojunction was assessed by in situ surface photovoltage measurements at room temperature. The evolution of the surface photovoltage significantly differs for the "wet" and the "dry" interfaces and is discussed in relation to the function in solar cell devices.
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Pascal:07-0411349Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Junction formation of CuInSe<sub>2</sub> with CdS: A comparative study of "dry" and "wet" interfaces</title><author><name sortKey="Hunger, R" uniqKey="Hunger R">R. Hunger</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Lebedev, M V" uniqKey="Lebedev M">M. V. Lebedev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg, 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sakurai, K" uniqKey="Sakurai K">K. Sakurai</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>AIST, Research Center for Photovoltaics</s1><s2>Tsukuba, Ibaraki, 305-8568</s2><s3>JPN</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Tsukuba, Ibaraki, 305-8568</wicri:noRegion></affiliation></author><author><name sortKey="Schulmeyer, T" uniqKey="Schulmeyer T">T. Schulmeyer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Mayer, Th" uniqKey="Mayer T">Th. Mayer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Klein, A" uniqKey="Klein A">A. Klein</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Niki, S" uniqKey="Niki S">S. Niki</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>AIST, Research Center for Photovoltaics</s1><s2>Tsukuba, Ibaraki, 305-8568</s2><s3>JPN</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Tsukuba, Ibaraki, 305-8568</wicri:noRegion></affiliation></author><author><name sortKey="Jaegermann, W" uniqKey="Jaegermann W">W. Jaegermann</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0411349</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0411349 INIST</idno><idno type="RBID">Pascal:07-0411349</idno><idno type="wicri:Area/Main/Corpus">007523</idno><idno type="wicri:Area/Main/Repository">007665</idno><idno type="wicri:Area/Russie/Extraction">000243</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>Band offset</term><term>Cadmium sulfides</term><term>Chalcopyrite</term><term>Comparative study</term><term>Copper selenides</term><term>Dry process</term><term>Electrolytes</term><term>Experimental design</term><term>Heterointerface</term><term>Heterojunctions</term><term>Indium selenides</term><term>Interface energy</term><term>Interfaces</term><term>Polycrystals</term><term>Solar cells</term><term>Synchrotron radiation</term><term>Temperature measurement</term><term>Valence bands</term><term>Wet process</term><term>X-ray photoelectron spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude comparative</term><term>Interface</term><term>Rayonnement synchrotron</term><term>Spectre photoélectron RX</term><term>Electrolyte</term><term>Procédé voie humide</term><term>Procédé voie sèche</term><term>Bande valence</term><term>Discontinuité bande</term><term>Plan expérience</term><term>Energie interface</term><term>Hétérojonction</term><term>Mesure température</term><term>Température ambiante</term><term>Cuivre séléniure</term><term>Indium séléniure</term><term>Chalcopyrite</term><term>Cadmium sulfure</term><term>Polycristal</term><term>Cellule solaire</term><term>CuInSe2</term><term>CdS</term><term>7320A</term><term>8460J</term><term>Hétérointerface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The junction formation of polycrystalline CuInSe<sub>2</sub> absorbers (CIS) with thermally evaporated CdS was investigated by high-resolution synchrotron X-ray photoelectron spectroscopy. The chemistry and electronics of the interfaces of Cd partial electrolyte treated CIS ("wet" processed) and clean, decapped CIS ("dry" processed) were compared. A valence band offset of 0.96(10) eV was determined in both cases. The Cd (Se,OH) surface layer induced by the wet Cd partial electrolyte process does not significantly modify the band alignment at the CIS/CdS heterointerface from the "dry", vacuum-processed CIS/CdS interface. During the stepwise interface formation the energy converting capability of the CIS/CdS heterojunction was assessed by in situ surface photovoltage measurements at room temperature. The evolution of the surface photovoltage significantly differs for the "wet" and the "dry" interfaces and is discussed in relation to the function in solar cell devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>515</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Junction formation of CuInSe<sub>2</sub> with CdS: A comparative study of "dry" and "wet" interfaces</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of Symposium O on thin film chalcogenide photovoltaic materials, EMRS 2006 conference, Nice, France, May 29-June 2, 2006</s1></fA09><fA11 i1="01" i2="1"><s1>HUNGER (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>LEBEDEV (M. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>SAKURAI (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>SCHULMEYER (T.)</s1></fA11><fA11 i1="05" i2="1"><s1>MAYER (Th.)</s1></fA11><fA11 i1="06" i2="1"><s1>KLEIN (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>NIKI (S.)</s1></fA11><fA11 i1="08" i2="1"><s1>JAEGERMANN (W.)</s1></fA11><fA12 i1="01" i2="1"><s1>TIWARI (A. N.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GUILLEMOLES (J.-F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHOCK (H.-W.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>NAKADA (T.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>NOUFI (R.)</s1><s9>ed.</s9></fA12><fA12 i1="06" i2="1"><s1>ABOU-RAS (D.)</s1><s9>ed.</s9></fA12><fA12 i1="07" i2="1"><s1>BREMAUD (D.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Darmstadt University of Technology, Institute of Materials Science, Petersenstr. 23</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>AIST, Research Center for Photovoltaics</s1><s2>Tsukuba, Ibaraki, 305-8568</s2><s3>JPN</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></fA14><fA15 i1="01"><s1>Centre for Renewable Energy Systems Technology, Loughborough University</s1><s2>Loughborough, LE11 3TU</s2><s3>GBR</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Institute of Research and Development on Photovoltaic Energy (UMR 7174, CNRS/EDF/ENSCP), 6 Quai Watier-BP 49</s1><s2>78401 Chatou</s2><s3>FRA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Hahn-Meitner-Institut Berlin GmbH, Glienickerstrasse 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></fA15><fA15 i1="04"><s1>Department of Electric and Electronic Engineering Faculty of Engineering, Ehime University, 3 Bunkyo-cho</s1><s2>Matsuyama, Ehime 790-8577</s2><s3>JPN</s3><sZ>4 aut.</sZ></fA15><fA15 i1="05"><s1>National Renewable Energy Laboratory, 1617 Code Boulevard</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>5 aut.</sZ></fA15><fA15 i1="06"><s1>Thin Films Physics Group, Laboratory for Solid State Physics, ETH Zurich, Technopark, Technoparkstrasse 1</s1><s2>8005 Zurich</s2><s3>CHE</s3><sZ>7 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>European Materials Research Society (EMRS)</s1><s2>67037 Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>6112-6118</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000149444260790</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>27 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0411349</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>The junction formation of polycrystalline CuInSe<sub>2</sub> absorbers (CIS) with thermally evaporated CdS was investigated by high-resolution synchrotron X-ray photoelectron spectroscopy. The chemistry and electronics of the interfaces of Cd partial electrolyte treated CIS ("wet" processed) and clean, decapped CIS ("dry" processed) were compared. A valence band offset of 0.96(10) eV was determined in both cases. The Cd (Se,OH) surface layer induced by the wet Cd partial electrolyte process does not significantly modify the band alignment at the CIS/CdS heterointerface from the "dry", vacuum-processed CIS/CdS interface. During the stepwise interface formation the energy converting capability of the CIS/CdS heterojunction was assessed by in situ surface photovoltage measurements at room temperature. The evolution of the surface photovoltage significantly differs for the "wet" and the "dry" interfaces and is discussed in relation to the function in solar cell devices.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20A</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Etude comparative</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Comparative study</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Estudio comparativo</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Interface</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Interfaces</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Rayonnement synchrotron</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Synchrotron radiation</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Electrolyte</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Electrolytes</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Procédé voie humide</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Wet process</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Procedimiento vía húmeda</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Procédé voie sèche</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Dry process</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Procedimiento vía seca</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Bande valence</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Valence bands</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Discontinuité bande</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Band offset</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Discontinuidad banda</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Plan expérience</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Experimental design</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Energie interface</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Interface energy</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Energía interfase</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Hétérojonction</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Heterojunctions</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Mesure température</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Temperature measurement</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Température ambiante</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Cuivre séléniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Indium séléniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Cadmium sulfure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Cadmium sulfides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Polycristal</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Polycrystals</s0><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>29</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Solar cells</s0><s5>29</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>CdS</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>7320A</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Hétérointerface</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Heterointerface</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>267</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS 2006 Conference: Symposium O on Thin Film Chalcogenide Photovoltaic Materials</s1><s3>Nice FRA</s3><s4>2006-05-29</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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